 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SD2067 (Tentative) Silicon NPN epitaxial planer type 6.90.1 1.05 2.50.1 0.05 Unit: mm (1.45) 0.8 0.5 4.50.1 For low-frequency output amplification 0.15 0.7 4.0 q q q q q Darlington connection. High foward current transfer ratio hFE. Large peak collector current ICP. High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.45-0.05 0.45-0.05 +0.1 +0.1 2.50.5 1 2 2.50.5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 120 100 5 3 2 1 150 -55 ~ +150 Unit V V V A Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.20.1 A W C C 0.45+0.1 - 0.05 0.65 max. 2.50.1 (HW type) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Internal Connection C B 200 E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage *1h FE (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = IC = 1A, IB = 1A*2 IC = 1A, IB = 1mA*2 1mA*2 min typ max 0.1 1 120 100 5 4000 40000 1.5 2 *2 14.50.5 s Features 0.65 max. 1.0 1.0 0.2 Unit A A V V V VCE(sat) VBE(sat) V V Rank classification Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 Pulse measurement Rank hFE 1 Transistor PC -- Ta 1.2 3.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 2.5 IB=180A 150A 2.0 120A 90A 1.5 60A 2SD2067 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 1.0 Collector current IC (A) 3 25C 1 Ta=100C -25C 0.3 0.8 0.6 0.4 1.0 0.1 0.2 0.5 30A 0.03 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 105 hFE -- IC Ta=100C Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 60 IE=0 f=1MHz Ta=25C Base to emitter saturation voltage VBE(sat) (V) 100 IC/IB=1000 Forward current transfer ratio hFE 50 25C 104 -25C 30 40 10 103 30 3 Ta=-25C 1 100C 0.3 25C 20 102 10 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 10 3 ICP IC 1 t=1s 0.3 0.1 0.03 0.01 0.003 0.001 0.1 Single pulse Ta=25C t=10ms Collector current IC (A) 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2 |
Price & Availability of 2SD2067
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |